Local VOC Measurements by Kelvin Probe Force Microscopy Applied on P-I-N Radial Junction Si Nanowires - Laboratoire de Physique des Interfaces et des Couches Minces (PICM) Accéder directement au contenu
Article Dans Une Revue Nanoscale Research Letters Année : 2019

Local VOC Measurements by Kelvin Probe Force Microscopy Applied on P-I-N Radial Junction Si Nanowires

Résumé

This work focuses on the extraction of the open circuit voltage (VOC) on photovoltaic nanowires by surface photovoltage (SPV) based on Kelvin probe force microscopy (KPFM) measurements. In a first approach, P-I-N radial junction (RJ) silicon nanowire (SiNW) devices were investigated under illumination by KPFM and current-voltage (I-V) analysis. Within 5%, the extracted SPV correlates well with the VOC. In a second approach, local SPV measurements were applied on single isolated radial junction SiNWs pointing out shadowing effects from the AFM tip that can strongly impact the SPV assessment. Several strategies in terms of AFM tip shape and illumination orientation have been put in place to minimize this effect. Local SPV measurements on isolated radial junction SiNWs increase logarithmically with the illumination power and demonstrate a linear behavior with the VOC. The results show notably that contactless measurements of the VOC become feasible at the scale of single photovoltaic SiNW devices.
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Origine : Publication financée par une institution

Dates et versions

hal-03313561 , version 1 (05-08-2021)

Identifiants

Citer

Clément Marchat, Letian Dai, José Alvarez, Sylvain Le Gall, Jean-Paul Kleider, et al.. Local VOC Measurements by Kelvin Probe Force Microscopy Applied on P-I-N Radial Junction Si Nanowires. Nanoscale Research Letters, 2019, 14, ⟨10.1186/s11671-019-3230-5⟩. ⟨hal-03313561⟩
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