Impact of PECVD-prepared interfacial Si and SiGe layers on epitaxial Si layers grown by PECVD (200 °C) and APCVD (1130 °C) - Laboratoire de Physique des Interfaces et des Couches Minces (PICM) Accéder directement au contenu
Article Dans Une Revue Applied Surface Science Année : 2021

Impact of PECVD-prepared interfacial Si and SiGe layers on epitaxial Si layers grown by PECVD (200 °C) and APCVD (1130 °C)

Résumé

The homoepitaxy of Si is particularly interesting for the purpose of kerfless wafer production, for example in the photovoltaic domain. Substrate surface engineering is a key step prior to epitaxial growth, which will affect the quality of the epitaxial layer and its detachment for layer transfer. In this work, we propose two plasma-based surface engineering methods including the deposition of a bilayer homoepitaxial interface and a SiGe heteroepitaxial interface. Their impact on the crystalline quality of epitaxial Si layers grown both by plasma enhanced chemical vapor deposition (PECVD) at 200 °C and by atmospheric pressure chemical vapor deposition (APCVD) at 1130 °C are explored. Stacking faults are observed in epitaxial Si layers with an ultra-thin epitaxial Si interface layer. For surface engineering method based on the 2 addition of an interfacial heteroepitaxial SiGe layer, higher interfacial hydrogen content and better bulk epitaxial Si quality are observed in comparison with interfacial homoepitaxial Si layer.
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Dates et versions

hal-03323010 , version 1 (20-08-2021)

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Junyang An, Jean-Luc Maurice, Valérie Depauw, Pere Roca I Cabarrocas, Wanghua Chen. Impact of PECVD-prepared interfacial Si and SiGe layers on epitaxial Si layers grown by PECVD (200 °C) and APCVD (1130 °C). Applied Surface Science, 2021, 546, pp.149056. ⟨10.1016/j.apsusc.2021.149056⟩. ⟨hal-03323010⟩
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